China 6 Inch 150mm Silicon Wafer Single Side Polished Silicon Wafer

Item

Specification

6''

Diameter

150±0.3mm

Thickness

725±15um

Type /Dopant

N / Phosphorus

P / Boron

Orientation

<100>,<111>

Resistivity

0.001-10000 ohm/cm

Primary/Flat length

57.5±2.5mm

Second flat

None /37.5±1.5mm

Roughness

Ra<5nm

TTV

<10μm

BOW

≤40

Warp

≤35

Package

Clean Room, vacuum package

Particle

@0.03um<100 count

Laser Mark

As Customer requested

Silicon wafer specificatations

Material

Semiconductor--- silicon

Size

2''/3''/4''/ 6''/8''

Thickness

Standard/customized

Growth method

FZ/CZ

Grade

Prime grade/Test grade

Orientation

<111>/<100>/<110>

Type

N type / P type

Dopant

P type- Boron

N type-phos/As/Sb

Purity

11N(99.9999999%)

Resitivity(ohm/cm)

0.01-10 / 10-1000 /5000-10000

TTV

≤10um

Bow

≤35um

Warp

≤35um

Oxygent content

≤18 New PPMA

Carborn content

≤1 New PPMA

Particle count

≥0.3um@≤10PPW

Package

Packed in cassette,and sealed in vacuum bag, 25pcs/cassette.