China G35 Photoelectric Sensor Switch

G35 Photoelectric sensor switch

Model explanation of Photoelectric Sensor

1. G: Photoelectric sensor
2. Sub code No.(18, 50, 76.....)
3. Operating voltage(2: 90-250VAC ;3: 10-30VDC; 4: 12-240VDC/24-240VAC; 5: Special voltage)
4. Detection method( A: Diffuse type; B: Mirror reflex type; C: Through beam type)
5. Detection distance (05: 5cm ; 10: 10cm; 30: 30cm; 101: 10m)
6. Output method(N: NPN transistor output; P: PNP transistor output; J: Relay output; L: AC two-line output; S: NPN+PNP)
7. Output status(A: NO; B: NC; C: NO+NC)
8. Auxi function code(T1: Front delay; T2: Rear delay; Y: Oil proof; T: With connector; I: Special requirement)

Technical Parameters:

Model NO.Detection distanceWorking voltageOutputDetection wayFormStateG35 -3A 50NA50cmDC10-30VNPNNODiffuse typeG35 -3A 50NB50cmDC10-30VNPNNCDiffuse typeG35 -3A 50NC5OcmDC10-30VNPNNO+NCDiffuse typeG35 -3A 5OPA50cmDC10-30VPNPNODiffuse typeG35 -3A 50PB50cmDC10-30VPNPNCDiffuse typeG35 -3A 50PC50cmDC10-30VPNPNO+NCDiffuse typeG35 -2A 50LA50cmAC90-250VSCR Control lable siliconNODiffuse typeG35 -2A 5OLB50cmAC90-250VSCR Control lable siliconNCDiffuse typeG35-3B3NA3mDC10-30VNPNNORetroreflectiveG35-3B3NB3mDC10-30VNPNNCRetroreflectiveG35-3B3NC3mDC10-30VNPNNO+NCRetroreflectiveG35-3B3PA3mDC10-30VPNPNORetroreflectiveG35-3B3PB3mDC10-30VPNPNCRetroreflectiveG35-3B3PC3mDC10-30VPNPNO+NCRetroreflectiveG35-2B3LA3mAC90-250VSCR Control lable siliconNORetroreflectiveG35-2B 3LB3mAC90-250VSCR Control lable siliconNCRetroreflectiveG35 -3C 5NA5mDC10-30VNPNNOThrough beamG35 -3C 5NB5mDC10-30VNPNNCThrough beamG35 -3C 5NC5mDC10-30VNPNNO+NCThrough beamG35 -3C 5PA5mDC10-30VPNPNOThrough beamG35 -3C 5PB5mDC10-30VPNPNCThrough beamG35 -3C 5PC5mDC10-30VPNPNO+NCThrough beamG35 -2C 5LA5mAC90-250VSCR Control lable siliconNOThrough beamG35 -2C 5LB5mAC90-250VSCR Control lable siliconNCThrough beam