K9GAG08U0E-SCB0 TSOP48 Multi-Level-Cell (2bit/cell) 16Gb E-die NAND Flash Memory IC
Features
•Voltage Supply2.7V ~ 3.6VMemory Cell2bit / Memory CellFast Write Cycle Time- Program time1.2ms(Typ.)- Block Erase Time : 1.5ms(Typ.)PackageTSOP48
- 3.3V Device : 2.7V ~ 3.6V
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Organization- Memory CellArray :(2,076M x 110.49K) x 8bit-DataRegister:(8K+436)x8bit
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Automatic Program and Erase- Page Program: (8K + 436)Byte-BlockErase:(1M+54.5K)Byte
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Page Read Operation- Page Size: (8K +436)Byte- RandomRead :400
μ
s(Max.)- SerialAccess: 30ns(Min.)
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Memory Cell : 2bit / Memory Cell
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Fast Write Cycle Time- Program time: 1.2ms(Typ.)- Block Erase Time : 1.5ms(Typ.)
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Command/Address/Data Multiplexed I/O Port
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Hardware Data Protection- Program/Erase Lockout During Power Transitions
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Reliable CMOS Floating-Gate Technology- ECC Requirement : 24bit/(1K +54.5)Byte- Endurance & Data Retention : Pleae refer to the qualification report
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Command Register Operation
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Fast Write Cycle Time- Program time: 1.2ms(Typ.)- Block Erase Time : 1.5ms(Typ.)