High Thermal Conductivity Tube/Rod/Plate/Heat Sink Boron Nitride /Bn Ceramics

Boron Nitride (BN) has high melting point, thermal conductivity, good insulation, high bending strength, good thermal shock resistance and chemical corrosion resistance. At high temperature, BN still has stable high frequency dielectric properties. The most unique advantage of BN is that it can be machined into porcelain with complex shape and high precision. Therefore, it is widely used in composite conductive ceramic evaporation boat, high temperature crucible, sputtering target, high temperature high frequency and plasma arc electric insulator, electronic module heat dissipation device, traveling wave tube collection and radiator, transistor heat sink, Semiconductor packaging heat dissipation substrate, high frequency induction furnace materials and atomic reactor structural materials, protective Photoelectric radiation, chemical radiation, nuclear radiation materials and radar transfer windows.
The main results are as follows:
1) BN is the only machinable ceramic with a precision of 0.01mm;the insulation strength is 2300v / cm,8 times of Al2O3, the RT resistance is more than 1014Ω. Cm at 1000 ºC. the melting point is as high as 2800 ºC. excellent heat resistance impact, from 20 ºC to 1000 ºC return 100 times without damage; General metals (iron, copper, aluminum, lead, etc.), rare earth metals, precious metals, semiconductor materials (germanium, silicon, potassium arsenide), glass, molten salts (crystal, fluoride, slag), inorganic acids, alkali.Typical application
High purity boron nitride crucible for molten metal
Nitride phosphors, silicon nitride, aluminum nitride and other ceramics and powder sintering crucible, sintering board.
Electrode Insulation and Protective Pipe for High temperature Furnace
Boron nitride insulation assembly for polysilicon ingot furnaceBoronNitride Ceramics PropertiesColorWhiteDensity2.0g/cm3Melt Point2800ºCBending Strength35MPaThermal Conductivity75W/m.KThermal expansion coefficient -1.0~2.5x10-6K-1Application Tem(Max)2200ºC(inert)Volume resistivity1014Ω.cmDielectric constant4.0@1HzHardness(Mohs)2