Description
IS61WV25616BLL-10TLI:SRAM Chip Async Single 2.5V/3.3V 4M-Bit 256K x 16 10ns 44-Pin TSOP-II
Package: TSOP(II)-44
Mfr. Part#: IS61WV25616BLL-10TLI
Mfr.: ISSI
Datasheet:(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: 180 days
The ISSI IS61WV25616BLLis high-speed, 4,194,304-bit static RAMs organized as262,144 words by 16 bits. It is fabricated using ISSI's highperformanceCMOStechnology.Thishighlyreliableprocesscoupled with innovative circuit design techniques, yieldshigh-performance and low power consumption devices.When CE is HIGH (deselected), the device assumes astandby mode at which the power dissipation can be reduceddown with CMOS input levels. Easy memory expansion is provided by using Chip Enableand Output Enable inputs, CE and OE. The active LOWWrite Enable (WE) controls both writing and reading of thememory. A data byte allows Upper Byte (UB) and LowerByte (LB) access. The IS61WV25616BLL ispackaged in the JEDEC standard 44-pin 400mil SOJ,44-pin TSOP Type II and 48-pin Mini BGA (6mm x 8mm).Key FeaturesHigh-speed access time: 8, 10, 20 nsLow Active Power: 85 mW (typical)Low Standby Power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS)High-speed access time: 25, 35, 45 nsLow Active Power: 35 mW (typical)Low Standby Power: 0.6 mW (typical) CMOS standbySingle power supplyVdd 1.65V to 2.2V (IS61WV25616Axx)Vdd 2.4V to 3.6V (IS61/64WV25616Bxx)Fully static operation: no clock or refresh requiredThree state outputsData control for upper and lower bytesIndustrial and Automotive temperature supportLead-free availableWhy choosing usLocated in Shenzhen, the electronic market center of China.100% guarantee components quality: Genuine Original.Sufficient stock on your urgent demand.Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturingFaster shipment: In stock components can ship the same day .24 Hours service
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