Product Attributes
Categories | Transistors - FETs, MOSFETs - SingleManufacturer | Infineon TechnologiesSeries | HEXFET®Packaging | TubePart Status | Not For New DesignsFET Type | N-ChannelTechnology | MOSFET (metal Oxide)Drain to Source Voltage (Vdss) | 55VCurrent - Continuous Drain (Id) @ 25°C | 110A (Tc)Drive Voltage (Max Rds On, Min Rds On) | 10VVgs(th) (Max) @ Id | 4V @ 250µAGate Charge (Qg) (Max) @ Vgs | 146nC @ 10VVgs (Max) | ±20VInput Capacitance (Ciss) (Max) @ Vds | 3247pF @ 25VFET Feature | -Power Dissipation (Max) | 200W (Tc)Rds On (Max) @ Id, Vgs | 8 mOhm @ 62A, 10VOperating Temperature | -55°C ~ 175°C (TJ)Mounting Type | Surface MountSupplier Device Package | D2PAKPackage / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263ABContact: Eira
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