FEATURES1. Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
2. Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
3. High speed data transfer rates with system frequency up to 933 MHz
4. 8 internal banks for concurrent operation
5. 8n-Bit pre-fetch architecture
6. Programmable CAS Latency
7. Programmable Additive Latency: 0, CL-1,CL-2
8. Programmable CAS WRITE latency (CWL) based on tCK
9. Programmable Burst Length: 4 and 8
10. Programmable Burst Sequence: Sequential or Interleave
11. BL switch on the fly
12. Auto Self Refresh(ASR)
13. Self Refresh Temperature(SRT)Product Technical Specifications
EU RoHSCompliantECCN (US)EAR99Part StatusActiveHTS8542.32.00.36DRAM TypeDDR3L SDRAMChip Density (bit)2GOrganization128Mx16Number of Internal Banks8Number of Words per Bank16MNumber of Bits/Word (bit)16Data Bus Width (bit)16Maximum Clock Rate (MHz)1600Maximum Access Time (ns)0.225Address Bus Width (bit)17Interface TypeSSTL_1.5Minimum Operating Supply Voltage (V)1.283Typical Operating Supply Voltage (V)1.35Maximum Operating Supply Voltage (V)1.45Operating Current (mA)180Minimum Operating Temperature (°C)-40Maximum Operating Temperature (°C)95Supplier Temperature GradeIndustrialNumber of I/O Lines (bit)16Pin Count96Supplier PackageTW-BGAMountingSurface MountPackage Height1(Max)Package Length13Package Width9PCB changed96